Semiconductor storage device

Details Semiconductor storage device Semiconductor storage device

1999-04-06

2000-08-15

Elms, Richard

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365207, 365208, G11C 700

Patent

active

061046558

ABSTRACT:
A semiconductor device that enables a reduction in power consumption and a stable operation, and which can be manufactured easily and with a high level of integration.
In an invention exemplifying the present application, a sense circuit constituting a DRAM comprises a bit line pre-charge circuit, a pre-amplifier circuit PSA100 and a main amplifier circuit MSA100. The pre-amplifier circuit is provide with a switch circuit and an amplifier circuit. The switch circuit comprises a switch element provided between input/output terminals and a pre-sense node, and a switch element provided between input/output terminals and another pre-sense node. The amplifier circuit comprises MOS transistors and switch elements.

REFERENCES:
patent: 5295094 (1994-03-01), Miyatake
patent: 5323349 (1994-06-01), Hamade et al.
patent: 5373473 (1994-12-01), Okumura
patent: 5724292 (1998-03-01), Wada
patent: 5894445 (1999-04-01), Kobayashi
Dram Cicuit, Advanced Electronics Series, pp. 85-86, pp. 202-213.
Hisashi Kato et al., "A Low Powerwide Voltage-Range Dram With 0.8V Array Operation" Technical Report Of IEICE, ICD97-19 (1997-05).

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