Semiconductor storage device

Details Semiconductor storage device Semiconductor storage device

1999-10-19

2000-10-24

Phan, Trong

Static information storage and retrieval

Systems using particular element

Capacitors

365 51, 365 63, G11C 1124, G11C 502, G11C 506

Patent

active

061377139

ABSTRACT:
Over an active region with two bent portions on a semiconductor substrate, first and second word lines extend to cross these bent portions and to be vertically spaced apart from each other. Around at the center of the active region, a capacitor for storing data thereon and a capacitor contact are formed. A first bit line contact, which is connected to the active region, is formed on the opposite side to the capacitor contact across the first word line over the active region. A second bit line contact, which is also connected to the active region, is formed on the opposite side to the capacitor contact across the second word line over the active region. These first and second bit line contacts are provided substantially symmetrically about the center of the memory cell. In a pair of memory cells adjacent to each other along bit lines, one vertical end of the active region in one of the memory cells is continuous with an associated vertical end of the active region in the other memory cell. And each of the first and second bit line contacts is shared between an adjacent pair of memory cells.

REFERENCES:
patent: 5378906 (1995-01-01), Lee
patent: 5856940 (1999-01-01), Rao
patent: 5923593 (1999-01-01), Hsu et al.

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