Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2008-09-26
2010-10-26
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S205000
Reexamination Certificate
active
07821817
ABSTRACT:
In a semiconductor storage device including a transistor for reading port, undesired voltage decrease may occur in a bit line in a reading operation due to a leak current from the transistor for reading port of a memory cell, which may cause a reading error. A semiconductor storage device according to one aspect of the present invention includes a third transistor having one of a source and a drain connected to a first bit line and switching supply of a ground voltage performed on the first bit line in accordance with a value held in a memory cell according to selection and non-selection of the memory cell, and a fixed voltage keeping circuit keeping a potential of the other of the source and the drain of the third transistor to a fixed potential in a memory cell non-selected state in a six-transistor SRAM.
REFERENCES:
patent: 2006/0039180 (2006-02-01), Kawasumi
patent: 2007/0279965 (2007-12-01), Nakazato et al.
patent: 2004-288306 (2004-10-01), None
patent: 2006-59520 (2006-03-01), None
NEC Electronics Corporation
Sughrue & Mion, PLLC
Tran Michael T
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