Semiconductor storage device

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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C365S230010, C365S230030

Reexamination Certificate

active

07417908

ABSTRACT:
In a semiconductor memory device provided with a redundancy circuit for conducting a repair of defective memory cells, the memory cell defects which are unevenly distributed can be efficiently repaired.The semiconductor memory device has a plurality of memory blocks, and the memory block includes a plurality of segments. A redundancy memory block which substitutes for defective data of a segment is physically provided to each of the plurality of memory blocks. A block address of the redundancy memory block is logically allocated to the plurality of memory blocks in common.

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