Semiconductor static random access memory device with covered dr

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257640, 257903, 257900, H01L 2702, H01L 2978

Patent

active

054689864

ABSTRACT:
A semiconductor memory device of the present invention includes a memory cell comprising two transfer transistors and two driver transistors in which a nitride film is covered only on these driver transistor areas. The nitride film is formed over source and drain regions and a gate electrode of the driver transistor.

REFERENCES:
patent: 4881108 (1989-11-01), Yoshikawa
patent: 5258645 (1993-11-01), Sato
patent: 5324974 (1994-06-01), Liao

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