Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-05-27
1995-11-21
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257640, 257903, 257900, H01L 2702, H01L 2978
Patent
active
054689864
ABSTRACT:
A semiconductor memory device of the present invention includes a memory cell comprising two transfer transistors and two driver transistors in which a nitride film is covered only on these driver transistor areas. The nitride film is formed over source and drain regions and a gate electrode of the driver transistor.
REFERENCES:
patent: 4881108 (1989-11-01), Yoshikawa
patent: 5258645 (1993-11-01), Sato
patent: 5324974 (1994-06-01), Liao
Kabushiki Kaisha Toshiba
Limanek Robert P.
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