Semiconductor single crystalline substrate and method for produc

Details Semiconductor single crystalline substrate and method for produc Semiconductor single crystalline substrate and method for produc

1997-06-27

1999-11-23

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with subsequent...

438974, 438978, H01L 2120

Patent

active

059899859

ABSTRACT:
In a semiconductor single crystalline substrate provided with a protecting film to prevent autodoping on the reverse surface thereof, for growing a vapor-phase epitaxial layer on the main obverse surface thereof, a width of a chamfer is set for locating an edge-crown occurred in consequence of a vapor-phase epitaxial growth on the chamfer, and a gap of a distance is formed between a periphery of the protecting film and an innermost part of the chamfer on the reverse surface.

REFERENCES:
patent: 4925809 (1990-05-01), Yoshiharu et al.

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