Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing
Patent
1996-11-29
1998-03-10
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
With means for measuring, testing, or sensing
117 14, 117218, C30B 3500
Patent
active
057256608
ABSTRACT:
A semiconductor single crystal growing apparatus is vertically and telescopically provided with a seed holder. The seed holder comprises a seed-holding member for holding a seed and a suspending bolt for bolting the seed-holding member. The front end of the seed coincides with a datum point when the seed holder is moved to a top dead point.
REFERENCES:
patent: 2842467 (1958-07-01), Landauer et al.
"Modulation of Dopant Segregation by Electric Currents in Czochralski-Type Crystal Growth"; Center for Materials Science & Engineering MIT, Lichtensteiger, et al., (Jun. 1971) pp. 1013-1014.
Garrett Felisa
Komatsu Electronic Metals Co. Ltd.
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