Semiconductor silicon wafer, semiconductor silicon wafer fabrica

Details Semiconductor silicon wafer, semiconductor silicon wafer fabrica Semiconductor silicon wafer, semiconductor silicon wafer fabrica

1998-12-16

2000-10-10

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 93, 117 97, 117102, C30B 2502

Patent

active

061297879

ABSTRACT:
An object of the present invention is to provide a single-crystal silicon wafer where octahedral voids of Grown-in defects, which are the generation source of COP on the surface and COP at several .mu.m depth of the surface layer of the single-crystal silicon wafer grown by the CZ method, are effectively eliminated, and a fabrication method of this wafer, where oxygen near the surface is out-diffused by annealing in a hydrogen and/or inactive gas ambient and oxide film on the inner walls of the octahedral voids near the surface are removed by the created unsaturated oxygen area, then oxidation annealing is performed in an oxygen ambient or mixed gas ambient of oxygen and inactive gas, so that interstitial silicon atoms are forcibly injected to completely eliminate the octahedral voids near the surface, and at the same time an IG layer is created in the bulk of the wafer.

REFERENCES:
patent: 5931662 (1999-08-01), Adachi et al.

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