Semiconductor silicon wafer and process for producing it

Details Semiconductor silicon wafer and process for producing it Semiconductor silicon wafer and process for producing it

1995-12-29

1998-04-14

Ryan, Patrick

Stock material or miscellaneous articles

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Of quartz or glass

257635, 257 49, 148DIG60, 148DIG61, 437 12, 4272481, 427255, 4273977, 427402, B32B 900, H01L 2358, H01L 2904, H01L 21306

Patent

active

057389420

ABSTRACT:
Provided is a process for producing a semiconductor silicon wafer by which an intrinsic gettering effect can be improved and at the same time the top side can be made free from faults. A silicon ingot is produced and sliced to obtain silicon wafers. Then, a polycrystal silicon depositing film is formed on one side of a silicon wafer, which is subjected to a heat treatment in an inert gas, a reducing gas or a mixture thereof to discharge oxygen from the vicinity of the other side. Alternatively, after discharging oxygen from the silicon wafer by a heat treatment, a polycrystal silicon depositing film may be formed on one side of the silicon wafer.

REFERENCES:
patent: 4053335 (1977-10-01), Hu
patent: 4561171 (1985-12-01), Schlosser
patent: 4666532 (1987-05-01), Korb et al.
patent: 5189508 (1993-02-01), Tachimori et al.
Applied Physics Letters, vol. 54, No. 18, pp. 1748-1750, May 1, 1989, Hideki Shirai, et al., "Effect of Back-Surface Polycrystalline Silicon Layer on Oxygen Precipitation in Czochralski Silicon Wafers".
Journal of Applied Physics, vol. 68, No. 3, pp. 1272-1281, Aug. 1, 1990, M. Morita, et al. "Growth of Native Oxide on a Silicon Surface".
Extended Abstracts, vol. 93/1, pp. 1286-1287, Jan. 1, 1993, Samuel Nagalingam, et al., "Threshold Interstitial Oxygen Concentration for Intrinsic Gettering with and Without Polyback in CZ-SI Wafers".

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