Semiconductor sensor with plural gate electrodes

Details Semiconductor sensor with plural gate electrodes Semiconductor sensor with plural gate electrodes

1993-07-01

1995-03-14

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257417, 257418, 257419, 73517R, 73777, H01L 2984

Patent

active

053979117

ABSTRACT:
A semiconductor sensor has a plurality of field-effect transistors disposed on a semiconductor substrate at spaced intervals. The field-effect transistors have respective drains electrically connected parallel to each other, respective sources electrically connected parallel to each other, and gates electrically connected parallel to each other. While a gate bias voltage is being applied to each of the field-effect transistors, a stress applied to the semiconductor substrate is detected based on a change in a combined output of the field-effect transistors. A single comb-shaped field-effect transistor or a single planar type field-effect transistor may be employed instead of the plurality of field-effect transistors.

REFERENCES:
patent: 3641812 (1972-02-01), Vick
patent: 4005318 (1977-01-01), Claiborne, Jr.
patent: 4191057 (1980-03-01), Busta
patent: 4633099 (1986-12-01), Tanabe et al.
patent: 4885621 (1989-12-01), Yoder et al.
patent: 5225705 (1992-04-01), Hiyama et al.
Reeder et al., "Surface-Acoustic-Wave Pressure and Temperature Sensors," Proceedings of the IEEE, vol. 64, No. 5, May 1976, pp. 754-756.
Microelectronics, "Paris Components--1970 Organs and Memories," May 1970, pp. 26-29, No Author.

Affiliated with

Also associated with

Rating

Semiconductor sensor with plural gate electrodes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor sensor with plural gate electrodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor sensor with plural gate electrodes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-714650