Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1994-10-06
1996-06-18
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257417, 257418, 257619, 257632, 73724, 73723, H01L 2982, H01L 2906, H01L 2358, G01L 900
Patent
active
055280706
ABSTRACT:
A semiconductor sensor comprising a semiconductor substrate and a glass substrate. The semiconductor substrate includes a support member having an opening centrally defined therein, a diaphragm positioned in the opening of the support member, and a flexible supporting means for supporting and coupling the diaphragm and the support member. The glass substrate includes a portion facing the diaphragm and the supporting means and at least one recess defined in this portion which faces the entirety of the supporting means. The glass substrate also includes a metal layer deposited on a surface of the glass substrate and a dielectric layer deposited on the metal layer such that the dielectric layer faces the diaphragm.
REFERENCES:
patent: 3800413 (1974-04-01), Frick
patent: 3983022 (1976-08-01), Auyang et al.
patent: 4168517 (1979-09-01), Lee
patent: 4196632 (1980-04-01), Sikorra
patent: 4301492 (1981-11-01), Paquin et al.
patent: 4425799 (1984-01-01), Park
patent: 4458537 (1984-07-01), Bell et al.
patent: 4467394 (1984-08-01), Grantham et al.
patent: 4606228 (1986-08-01), Whitmore
patent: 4609966 (1986-09-01), Kuisma
patent: 4612812 (1986-09-01), Broden
patent: 4754365 (1988-06-01), Kazahaya
patent: 4773972 (1988-09-01), Mikkor
patent: 4790192 (1988-12-01), Knecht et al.
patent: 4829826 (1989-05-01), Valentin et al.
patent: 4872945 (1989-10-01), Myers et al.
patent: 4905575 (1990-03-01), Knecht et al.
patent: 4996627 (1991-02-01), Zias et al.
patent: 5056369 (1991-10-01), Tamai et al.
patent: 5114664 (1992-05-01), Terhune
patent: 5161532 (1992-11-01), Joseph
patent: 5169599 (1992-12-01), Joseph et al.
patent: 5177579 (1993-01-01), Jerman
patent: 5178015 (1993-01-01), Loeppert et al.
patent: 5209118 (1993-05-01), Jerman
patent: 5211058 (1993-05-01), Fukiura et al.
patent: 5216273 (1993-06-01), Doering et al.
patent: 5264075 (1993-11-01), Zanini-Fisher et al.
patent: 5277068 (1994-01-01), Fukiura et al.
patent: 5320705 (1994-06-01), Fujii et al.
patent: 5323656 (1994-06-01), Fung et al.
Clark Jhihan
Jackson Jerome
Yazaki Meter Co., Ltd.
LandOfFree
Semiconductor sensor manufactured through anodic-bonding process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor sensor manufactured through anodic-bonding process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor sensor manufactured through anodic-bonding process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-224837