Semiconductor sensor having a diffused resistor

Details Semiconductor sensor having a diffused resistor Semiconductor sensor having a diffused resistor

2005-08-23

2005-08-23

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

C257S414000, C257S417000

Reexamination Certificate

active

06933582

ABSTRACT:
A semiconductor sensor includes a P-type semiconductor substrate having a N-type semiconductor layer disposed on one surface of the substrate and a P-type diffused resistor disposed in the N-type semiconductor layer. A first electric voltage is applied to the N-type semiconductor layer, a second electric voltage is applied to the substrate, a third electric voltage is applied to the P-type diffused resistor. The first electric voltage is higher than the second and third electric voltages. The sensor ensures stable operation against electric leakage and high noise protection because two depletion layers are formed.

REFERENCES:
patent: 5614753 (1997-03-01), Uchikoshi et al.
patent: 5932921 (1999-08-01), Sakai et al.
patent: 6218717 (2001-04-01), Toyoda et al.
patent: A-S57-34373 (1982-02-01), None
patent: A-H2-116174 (1990-04-01), None
patent: B2-2871064 (1999-01-01), None

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