Semiconductor, semiconductor device, and method for fabricating

Details Semiconductor, semiconductor device, and method for fabricating Semiconductor, semiconductor device, and method for fabricating

1994-02-15

1997-06-17

Kunemund, Robert

Fishing, trapping, and vermin destroying

637233, 117 8, 117930, H01L 2120

Patent

active

056396988

ABSTRACT:
Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

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