Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-05-03
2011-05-03
Huynh, Andy (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21476
Reexamination Certificate
active
07935629
ABSTRACT:
An apparatus and method are disclosed for an improved semiconductor interconnect scheme using a simplified process. In an embodiment of the apparatus, a polysilicon shape is formed on a silicon area. The polysilicon shape is created having a bridging vertex. When a spacer is created on the polysilicon shape, the spacer width is formed to be small enough near the bridging vertex to allow a silicide bridge to form that creates an electrical coupling between the silicon area and the bridging vertex. Semiconductor devices and circuits are created using the improved semiconductor interconnect scheme using the simplified process.
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Christensen Todd Alan
Donze Richard Lee
Hovis William Paul
Kueper Terrance Wayne
Sheets, II John Edward
Brown Valerie
Huynh Andy
International Business Machines - Corporation
Williams Robert R.
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