Semiconductor ridge waveguide laser with lateral current injecti

Coherent light generators – Particular active media – Semiconductor

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372 46, 372 47, 372 96, H01S 319, H01S 310

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active

055639020

ABSTRACT:
A semiconductor laser device is provided in which an active layer is sandwiched between and upper and lower cladding layer, the lower cladding layer being situated on a semi-insulating substrate. The upper cladding layer includes a raised ridge section running from end to end between the facets or end surfaces of the laser cavity. The ridge section aids in optical confinement. A p+ contact region and an n+ contact region are formed extending though the upper cladding layer, the active region and the lower cladding layer on both sides of the ridge to provide lateral injection of charge carriers into the active region of the laser.

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