Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1998-01-12
1999-04-20
Fears, Terrell W.
Static information storage and retrieval
Systems using particular element
Capacitors
365 51, G11C 1124
Patent
active
058963111
ABSTRACT:
A new semiconductor structure for a ROM device and a method for fabricating the same are provided. The ROM device includes a plurality of trench-type source/drain regions which serve as a plurality of bit lines for the ROM device. By this method, the conventional step of using ion implantation to form the bit lines can be eliminated. Further, an insulating layer is formed between the source/drain regions and the underlying a substrate such that the leakage current in the junction between the source/drain regions and the substrate can be minimized. The ON/OFF state of each of the MOSFET memory cells of the ROM device is dependent on whether the associated channel region comes into lateral contact with the neighboring source/drain regions through a mask removed portion of the insulating layer. A particular MOSFET memory cell is set to a permanently-ON state provided that its source/drain regions come into lateral contact with the associated channel region through a removed portion of the insulating layer, and is set to a permanently-OFF state otherwise. The new semiconductor structure for the ROM device allows for an increase in the breakdown voltage of the source/drain regions and thereby the operating current of the memory cells during access operation.
REFERENCES:
patent: 5430672 (1995-07-01), Kubawara
patent: 5668031 (1997-09-01), Hsue et al.
Fears Terrell W.
United Microelectronics Corp.
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