Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1997-04-16
1998-09-22
Nelms, David C.
Static information storage and retrieval
Systems using particular element
Semiconductive
365104, 257296, 257324, 257326, G11C 1134
Patent
active
058124489
ABSTRACT:
A semiconductor read-only memory (ROM) device is provided. The particular semiconductor structure of this ROM device can reduce the parasitic capacitance between the bit lines and the word lines, such that the resistance-capacitance time constant of the memory cells can be reduced to thereby speed up the access time of the read operation to the memory cells. The binary data stored in each memory cell is dependent on whether one contact window is predefined to be formed in a thick insulating layer between the buried bit lines and the overlaying word lines. If the gate electrode of one memory cell is electrically connected to the associated word line via one contact window through the insulating layer, that memory cell is set to a permanently-ON state representing a first binary value; otherwise, that memory cell is set to a permanently-OFF state representing a second binary value.
REFERENCES:
patent: 4057821 (1977-11-01), Patel
patent: 4063267 (1977-12-01), Hsia
patent: 4153984 (1979-05-01), Hsia
patent: 4455495 (1984-06-01), Masuhara et al.
patent: 4494218 (1985-01-01), Naiff
patent: 5389567 (1995-02-01), Acovic et al.
Nelms David C.
Nguyen Hien
United Microelectronics Corp.
LandOfFree
Semiconductor read-only memory device and method of fabricating does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor read-only memory device and method of fabricating , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor read-only memory device and method of fabricating will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1629637