Semiconductor radiation detector and radiation detection...

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

Reexamination Certificate

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C257S042000

Reexamination Certificate

active

11045153

ABSTRACT:
The present invention provides a semiconductor radiation detector and radiation detection apparatus capable of improving energy resolution and the semiconductor radiation detection apparatus includes a semiconductor radiation detector and a signal processing circuit which processes a radiation detection signal output from the semiconductor radiation detector. The semiconductor radiation detector is provided with anode electrodes A and cathode electrodes C disposed so as to face each other with semiconductor radiation detection elements placed in-between. The semiconductor radiation detection element is made up of a single crystal of thallous bromide containing trivalent thallium (e.g., tribromobis thallium). The semiconductor radiation detector containing such a semiconductor radiation detection element reduces lattice defects in the single crystal and thereby increases charge collection efficiency.

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Hitomi et a, “Thallium Bromide Optical and Radiaiton Detectors for X-and Gamma-Ray Spectroscopy,” 2002, pp. 2406-2408.
Adzic et al, “Bromide Adsorption Induced Formation of Thallium Bromide Adlayers with Varying Composition and Structure on the Au(III) Electrode Surface,” Aug. 13, 1998, vol. 102, No. 33, p. 6305.
Hitomi et al, “Characterization of thallium bromide crystals for radiation detector applications,” 2001, Journal of Crystal Growth 225, pp. 129-132.
Oliveira et al, “Purification and Preparation of TlBr Crystals for Room Temperature Radiation Detector Applications,” IEEE Transactions on Nuclear Science, Jun. 2004, vol. 51, No. 3, pp. 1224-1227.

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