Semiconductor protection circuit

Details Semiconductor protection circuit Semiconductor protection circuit

1996-04-25

1997-12-16

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257469, 257529, 257568, H01L 31058

Patent

active

056988877

ABSTRACT:
In a semiconductor protection circuit, a current fuse and a transistor are connected in series between a power supply terminal and a ground. A bias circuit is provided between the base and the emitter of the transistor. The bias circuit applies between the base and the emitter of the transistor a constant bias voltage that is lower than a normal environment temperature forward voltage of a p-n junction between the transistor's base and emitter. When a load connected to the other terminal of the current fuse is overheated, the forward voltage of the p-n junction drops, and the transistor is turned on.

REFERENCES:
patent: 4716302 (1987-12-01), Flannagan et al.
patent: 5526317 (1996-06-01), McClure
patent: 5625521 (1997-04-01), Luu

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