Semiconductor product having a semiconductor substrate and a...

Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure

Reexamination Certificate

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C257S301000, C257SE27092, C438S014000, C438S018000

Reexamination Certificate

active

11336384

ABSTRACT:
A semiconductor product having a test structure, in which a contact connection short-circuits that source/drain region of a transistor which is connected to an inner capacitor electrode of a trench capacitor by a dopant diffusion region with an interconnect is disclosed. Methods are disclosed for making an electrical measurement, to determine the nonreactive resistance of dopant diffusion regions, the so-called “buried straps”, without the measurement result being corrupted by the nonreactive resistance of a transistor channel. In accordance with one embodiment of the invention having a plurality of electrical connections of the capacitor electrode, static currents can also be conducted through a buried strap and the capacitor electrode. Embodiments are disclosed that make it possible to perform at novel test structures of a semiconductor wafer electrical resistance measurements, which cannot be carried out at memory cells of a memory cell array themselves.

REFERENCES:
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patent: 6563160 (2003-05-01), Clevenger et al.
patent: 6853000 (2005-02-01), Felber et al.
patent: 6946678 (2005-09-01), Wu et al.
patent: 2004/0057292 (2004-03-01), Lachenmann et al.
patent: 2004/0061110 (2004-04-01), Felber et al.
patent: 2005/0051765 (2005-03-01), Rosskopf et al.
patent: 2005/0196918 (2005-09-01), Schwerin
patent: 102 42 054 (2004-04-01), None
patent: 102 45 533 (2004-04-01), None
patent: 103 40 714 (2005-05-01), None

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