Semiconductor processing system with ultra low-K dielectric

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...

Reexamination Certificate

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C438S780000, C257SE21077

Reexamination Certificate

active

07622403

ABSTRACT:
A semiconductor processing system with ultra low-K dielectric is provided including providing a substrate having an electronic circuit, forming an ultra low-K dielectric layer, having porogens, over the substrate, blocking an incoming radiation from a first region of the ultra low-K dielectric layer, evaporating the porogens from a second region of the ultra low-K dielectric layer by projecting the incoming radiation on the second region, and removing the ultra low-K dielectric layer in the first region with a developer.

REFERENCES:
patent: 6387824 (2002-05-01), Aoi
patent: 6903004 (2005-06-01), Spencer et al.
patent: 6992003 (2006-01-01), Spencer et al.
patent: 7056840 (2006-06-01), Miller et al.
patent: 2004/0213986 (2004-10-01), Kim et al.
patent: 2005/0272237 (2005-12-01), Hautala et al.
patent: 2005/0272265 (2005-12-01), Geffken et al.
Jeffrey M. Catchmark, Guy P. Lavallee, Michael Rogosky, and Youngchul Lee, “Direct Sub-100-nm Patterning of an Organic Low-k Dielectric for Electrical and Optical Interconnects,” Journal of Electronic Materials, vol. 34, No. 3, 2005.

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