Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1998-08-28
2000-10-31
Nelms, David
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
438525, H01L 21425
Patent
active
061402141
ABSTRACT:
Semiconductor processing methods, semiconductor processing methods of forming diodes, and semiconductor processing methods of forming Schottky diodes are described. In one embodiment, a first layer of material is formed over a substrate. A second layer of material is formed over the first layer of material. An opening is formed to extend through the first and second layers sufficient to expose a portion of the substrate. An angled ion implant is conducted through the opening and into the substrate. After the conducting of the angled ion implant, the second layer of material is removed. In another embodiment, a diode opening is formed in a layer of material over a semiconductive substrate. In another embodiment, a Schottky diode is formed by forming an opening in a layer of material which is formed over a semiconductive substrate, wherein the opening exposes a substrate portion. An angled ion implant is conducted through the opening and into the semiconductive substrate. A conductive layer of material, e.g. a silicide, is formed within the opening. In another embodiment, a Schottky diode is formed by conducting an angled ion implant of impurity into a semiconductive substrate sufficient to form an impurity ring which is received within the substrate. A conductive Schottky material layer is formed proximate the impurity ring.
REFERENCES:
patent: 3801365 (1974-04-01), Hrzek
patent: 3873371 (1975-03-01), Wolf
patent: 4864378 (1989-09-01), Tsaur
patent: 5087322 (1992-02-01), Lillienfeld et al.
patent: 5726069 (1998-03-01), Chen et al.
U.S. application No. 08/920,535, Honeycutt et al., filed Aug. 29, 1997.
Gonzalez Fernando
Violette Michael P.
Le Dung A
Micro)n Technology, Inc.
Nelms David
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