Semiconductor processing methods of forming field oxidation regi

Details Semiconductor processing methods of forming field oxidation regi Semiconductor processing methods of forming field oxidation regi

1995-10-18

1997-10-07

Trinh, Michael

Fishing, trapping, and vermin destroying

437 61, 437239, H01L 2176

Patent

active

056747764

ABSTRACT:
A semiconductor processing method of forming a pair of adjacent field oxide regions includes, i) providing a sacrificial pad oxide layer to a thickness of from 20 Angstroms to 100 Angstroms; ii) providing a patterned masking layer over the sacrificial pad oxide layer and over a desired active area region, the layer having a thickness of from 500 Angstroms to 3000 Angstroms and comprising a pair of adjacent masking blocks having a minimum pitch of from 0.5 micron to 0.7 micron; iii) oxidizing portions of the substrate unmasked by the masking layer in an H.sub.2 O steam ambient at a pressure of from about 0.5 atmosphere to about 2 atmospheres and at a temperature of from about 900.degree. C. to about 1200.degree. C. to form at least one pair of adjacent field oxide regions, the formed field oxide regions having a location of maximum thickness of from 1500 Angstroms to 3000 Angstroms; iv) stripping the masking layer from the substrate; v) providing a gate oxide layer over the active area between the pair of field oxide regions; and vi) etching portions of the field oxide regions prior to providing the gate oxide, such etching resulting in removal of a total of from 250 to 1000 Angstroms of oxide from the field oxide regions prior to provision of the gate oxide, such etching resulting in a maximum width of the respective field oxide regions of from 0.20 to 0.40 micron and a minimum pitch of the adjacent pair of field oxide regions of from 0.5 to 0.7 micron.

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