Semiconductor device manufacturing: process – Gettering of substrate
Patent
1998-09-03
2000-10-24
Niebling, John F.
Semiconductor device manufacturing: process
Gettering of substrate
438 58, 438143, 438402, 438648, 438685, 438688, 438722, 438723, H01L 21322, H01L 2144, H01L 21461
Patent
active
061366706
ABSTRACT:
In one aspect, the invention includes a semiconductor processing method of forming a contact between two electrically conductive materials comprising: a) forming a first conductive material over a substrate, the first conductive material being capable of being oxidized in the presence of oxygen to an insulating material; b) sputter cleaning the first conductive material in the presence of oxygen in a gaseous phase and in the presence of an oxygen gettering agent; and c) forming a second conductive material in electrical contact with the first conductive material. In another aspect, the invention includes a semiconductor processing method of forming a contact between two metal layers comprising: a) forming a first metal layer over a substrate; b) forming an oxygen containing material over the substrate proximate the first metal layer and covering at least a portion of the first metal layer; c) forming an opening through the oxygen containing material to the first metal layer; e) after forming the opening and with the substrate in a processing chamber, sputter cleaning the first metal layer and liberating oxygen from the oxygen containing material; f) while sputter cleaning, gettering the liberated oxygen within the processing chamber; and g) forming a second metal layer within the opening and in electrical contact with the first metal layer.
REFERENCES:
patent: 5480836 (1996-01-01), Harada et al.
patent: 5498768 (1996-03-01), Nishitani et al.
patent: 5527739 (1996-06-01), Parrillo et al.
patent: 5726097 (1998-03-01), Yanagida
patent: 5801098 (1998-09-01), Fiordalice et al.
John F. O'Hanlon, Ch. 14 Getter and Ion Pumps, in A User's Guide to Vacuum Technology, at 236-245 (John Wiley & Sons, 2d ed. 1989).
Blalock Guy T.
Hineman Max
Micro)n Technology, Inc.
Nguyen Ha Tran
Niebling John F.
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