Semiconductor processing methods of forming a conductive gate an

Details Semiconductor processing methods of forming a conductive gate an Semiconductor processing methods of forming a conductive gate an

1996-09-17

1998-04-14

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

H01L 213105

Patent

active

057390665

ABSTRACT:
A semiconductor processing method of forming a conductive gate or gate line over a substrate includes, a) forming a conductive gate over a gate dielectric layer on a substrate, the gate having sidewalls and an interface with the gate dielectric layer; b) electrically insulating the gate sidewalls; and c) after electrically insulating the gate sidewalls, exposing the substrate to oxidizing conditions effective to oxidize at least a portion of the gate interface with the gate dielectric layer. According to one aspect of the invention, the step of exposing the substrate to oxidizing conditions is conducted after provision of a first insulating material and subsequent anisotropic etch thereof to insulate the gate sidewalls. According to another aspect of the invention, the step of exposing the substrate to oxidizing conditions is conducted after provision of first and second insulating materials and subsequent anisotropic etch thereof to insulate the gate sidewalls. According to another aspect of the invention, the step of exposing the substrate to oxidizing conditions is conducted after provision and subsequent anisotropic etch of a first insulating material, followed by provision and subsequent anisotropic etch of a second insulating material.

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