Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-01-18
2005-01-18
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S592000, C438S585000, C438S303000
Reexamination Certificate
active
06844252
ABSTRACT:
A semiconductor processing method of forming a conductive gate or gate line over a substrate includes, a) forming a conductive gate over a gate dielectric layer on a substrate, the gate having sidewalls and an interface with the gate dielectric layer; b) electrically insulating the gate sidewalls; and c) after electrically insulating the gate sidewalls, exposing the substrate to oxidizing conditions effective to oxidize at least a portion of the gate interface with the gate dielectric layer. According to one aspect of the invention, the step of exposing the substrate to oxidizing conditions is conducted after provision of a first insulating material and subsequent anisotropic etch thereof to insulate the gate sidewalls.
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Trinh Michael
Wells St. John P.S.
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