Semiconductor processing methods

Details Semiconductor processing methods Semiconductor processing methods

2008-04-22

2008-04-22

Le, Thao X. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21593, C257SE21575, C257SE21597

Reexamination Certificate

active

11168856

ABSTRACT:
The invention includes methods of forming titanium-containing materials, such as, for example, titanium silicide. The invention can use alternating cycles of titanium halide precursor and one or more reductants to form the titanium-containing material. For instance, the invention can utilize alternating cycles of titanium tetrachloride and activated hydrogen to form titanium silicide on a surface of a silicon-containing substrate.

REFERENCES:
patent: 4619038 (1986-10-01), Pintchovski
patent: 7049702 (2006-05-01), Tseng
patent: 2004/0180543 (2004-09-01), Lee et al.
“Metastable phase formation in titanium-silicon thin films”; Robert Beyers and Robert Sinclair; J. Appl. Phys. 57 (12) Jun. 15, 1985; pp. 5240-5245.
“Titanium disilicide formation by rf plasma enhanced chemical vapor deposition and film properties”; Osama A. Fouad et al.; “Applied Surface Science” 206 (2003) pp. 159-166; 2002 Elsevier Science B.V.

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