Semiconductor processing methods

Etching a substrate: processes – Nongaseous phase etching of substrate – Relative movement between the substrate and a confined pool...

Reexamination Certificate

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C216S091000, C216S093000, C216S096000

Reexamination Certificate

active

07056447

ABSTRACT:
Embodiments in accordance with the present invention provide for removing organic materials from substrates, for example substrates employed in the fabrication of integrated circuits, liquid crystal displays and the like. Such embodiments also provide for forming self-limiting oxide layers on oxidizable materials disposed on such substrates where such materials are exposed to the methods of the present invention. The methods of the present invention provide for contacting substrates with a solution of ozone, water and a surfactant, the solution being effective for removing organic materials and forming self-limiting oxide layers on oxidizable materials.

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