Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-09-18
1999-09-28
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438629, 438648, 438672, H01L 21285, H01L 213065
Patent
active
059603143
ABSTRACT:
A semiconductor processing method of providing an electrically conductive interconnecting plug between an elevationally inner conductive node and an elevationally outer conductive node includes, a) providing an inner node location to which electrical connection is to be made; b) providing an electrically insulative layer outwardly over the inner node location; c) patterning and etching a contact opening through the insulative layer to the inner node location; d) substantially filling the contact opening with an electrically conductive material to provide a conductive plug within the contact opening to the inner node location, the conductive plug defining an outermost fang gap between the conductive plug and the electrically insulative layer, the fang gap having a first width; e) widening the fang gap to a second width which is greater than the first width by a timed RF plasma etch of the electrically conductive material; f) providing an outer metal layer over the conductive plug after the widening step, the metal layer at least partially filling the widened fang gap; and g) patterning the metal layer into a conductive line which electrically interconnects with the conductive plug.
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Langley Rod C.
O'Brien Timothy P.
Rhodes Howard E.
Micro)n Technology, Inc.
Quach T. N.
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