Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-12-08
1998-10-06
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438629, 438648, 438672, H01L 21283, H01L 213065
Patent
active
058175733
ABSTRACT:
In one aspect, a semiconductor processing method for connecting a metal layer to a plug when there is a fang gap between the plug and a layer surrounding the plug includes: a) forming a conductive material within an opening in a surrounding layer; b) etching the conductive material with a first etch chemistry to form a fang gap between the conductive material and the surrounding layer, the fang gap having a first width; c) etching the conductive material with a second etch chemistry to widen the fang gap to a second width which is greater than the first width, the second etch chemistry being different from the first etch chemistry; and d) providing an outer metal layer over the conductive plug after widening the fang gap, the metal layer at least partially filling the widened fang gap.
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Langley Rod C.
O'Brien Timothy P.
Rhodes Howard E.
Micro)n Technology, Inc.
Quach T. N.
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