Semiconductor processing method of producing an isolated polysil

Details Semiconductor processing method of producing an isolated polysil Semiconductor processing method of producing an isolated polysil

1993-01-05

1995-02-21

Fourson, George

Fishing, trapping, and vermin destroying

437 60, 437919, 156636, H01L 21265

Patent

active

053915119

ABSTRACT:
A semiconductor processing includes: a) providing an area atop a semiconductor wafer to which electrical connection to a polysilicon containing component is to be made; b) providing a layer of first material atop the semiconductor wafer, the first material layer having an upper surface; c) providing a contact opening in the layer of first material to the area, the contact opening having a selected open cross dimension; d) providing a layer of polysilicon to a selected thickness atop the layer of first material and within the contact opening to contact the area, the selected thickness being less than one-half the open dimension such that polysilicon less than completely fills the contact opening and thereby defines an outwardly open polysilicon lined cavity; e) with the wafer having the polysilicon lined cavity outwardly open, chemical mechanical polishing with a chemical mechanical polishing slurry the polysilicon atop the first material layer to the upper first material layer surface to define an isolated polysilicon lined cavity; and f) removing chemical mechanical polishing slurry residuals from the outwardly open polysilicon lined cavity.

REFERENCES:
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patent: 4543130 (1985-09-01), Shwartzman
patent: 4736759 (1988-04-01), Coberly et al.
patent: 4854337 (1989-08-01), Bunkenburg et al.
patent: 4869278 (1989-09-01), Bran
patent: 5148823 (1992-09-01), Bran
patent: 5218219 (1993-06-01), Ajika et al.

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