Semiconductor processing method of forming field isolation oxide

Details Semiconductor processing method of forming field isolation oxide Semiconductor processing method of forming field isolation oxide

1996-08-19

1998-02-03

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

H01L 2176

Patent

active

057144141

ABSTRACT:
A semiconductor processing method of forming field isolation oxide relative to a semiconductor substrate includes providing a semiconductor substrate having field and active area regions; forming masking material over the active area region and leaving the field region exposed, the masking material comprising first, second and third layers, and having a sidewall; exposing the semiconductor substrate to first oxidation conditions effective to form field isolation oxide of a first thickness over the exposed field region; forming an etch stop material layer over the sidewall; removing at least a portion of the third layer selectively relative to the etch stop material layer; and subjecting the semiconductor substrate to second oxidation conditions effective to grow the field isolation oxide to a second thickness on the exposed field region of the semiconductor substrate.

REFERENCES:
patent: 4520553 (1985-06-01), Kraft
patent: 4743566 (1988-05-01), Bastiaens et al.
patent: 4758530 (1988-07-01), Schubert
patent: 5145802 (1992-09-01), Tyson et al.
patent: 5468675 (1995-11-01), Kaigawa

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