Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-08-14
2000-08-08
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438626, 438632, 438635, 438672, H01L 214763
Patent
active
061001856
ABSTRACT:
Conductive structures, conductive lines, conductive SRAM lines, integrated circuitry, SRAM cells, and methods of forming the same are described. In one embodiment, a substrate is provided and a layer comprising TiN is physical vapor deposited over the substrate having greater than or equal to about 90% by volume <200> grain orientation. In another embodiment, at least two components are electrically connected by forming a layer of TiN over a substrate having the desired by-volume concentration of <200> grain orientation, and etching the layer to form a conductive line. In a preferred embodiment, conductive lines formed in accordance with the invention electrically connect at least two SRAM components and preferably form cross-coupling electrical interconnections between first and second inverters of an SRAM cell.
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Berry Renee R.
Micro)n Technology, Inc.
Nelms David
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