Semiconductor processing method of etching insulating inorganic

Details Semiconductor processing method of etching insulating inorganic Semiconductor processing method of etching insulating inorganic

1993-03-15

1994-11-29

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156667, 156662, 156651, 156635, H01L 2100

Patent

active

053686870

ABSTRACT:
In one aspect of the invention, a semiconductor processing method includes the following steps: a) providing a layer of an insulating inorganic metal oxide material atop a semiconductor wafer; b) subjecting the wafer with exposed insulating inorganic metal oxide material to dry etching conditions using a halogen or pseudohalogen based chemistry to react the insulating inorganic metal oxide material into solid halogenated or pseudohalogenated material; and c) reacting the solid halogenated or pseudohalogenated material with a gaseous organic ligand precursor to form a gaseous metal organic coordination complex incorporating the organic ligand precursor and to form a gaseous halogenated or pseudohalogenated species which are expelled from the wafer. In another aspect, a semiconductor processing method of removing or otherwise cleaning metal from a semiconductor wafer includes the following steps: a) subjecting a semiconductor wafer having exposed metal to a dry halogen or pseudohalogen gas to react the metal into solid halogenated or pseudohalogenated material; and b) reacting the solid halogenated or pseudohalogenated material with a gaseous organic ligand precursor to form a gaseous metal organic coordination complex incorporating the organic ligand precursor and metal, and to form a gaseous halogenated or pseudohalogenated species, the complex and species being expelled from the wafer. Alternately, the metal is directly incorporated with the gaseous organic ligand precursor without previous halogenation.

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"Plasma Etching of PLT-Thin Films and Bulk PLZT Using Fluorine- and Chlorine Based Gases"; Poor et al., Mater. Res. Soc. Symp. Proc.; 200; abstract only; 1990.
K. Koyama et al., "A Stacked Capacitor With (Ba.sub.x SR.sub.1-x)TiO.sub.3 For 256M DRAM," IEDM 91, 824.

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