Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Patent
1996-05-31
1998-08-11
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
438505, 438559, 438976, H01L 2122, H01L 21324
Patent
active
057927006
ABSTRACT:
A semiconductor processing method of providing a polysilicon layer atop a semiconductor wafer comprises the following sequential steps: a) depositing a first layer of arsenic atop a semiconductor wafer; b) depositing a second layer of silicon over the arsenic layer, the second layer having an outer surface; c) first annealing the wafer at a temperature of at least about 600.degree. C. for a time period sufficient to impart growth of polycrystalline silicon grains in the second layer and providing a predominately polysilicon second layer, the first annealing step imparting diffusion of arsenic within the second layer to promote growth of large polysilicon grains; and d) with the second layer outer surface being outwardly exposed, second annealing the wafer at a temperature effectively higher than the first annealing temperature for a time period sufficient to outgas arsenic from the polysilicon layer. As an alternate consideration, the layer of silicon could be in situ provided with an effective quantity of As during deposition.
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Manning Monte
Turner Charles L.
Bowers Jr. Charles L.
Micro)n Technology, Inc.
Radomsky Leon
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