Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-07-26
2008-11-18
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S690000, C438S691000, C438S693000, C257SE21304, C257SE21583
Reexamination Certificate
active
07452816
ABSTRACT:
This invention includes a chemical mechanical polishing method including providing a substrate having an organic material to be polished by chemical mechanical polishing. In one implementation, the organic material is chemical mechanically polished using a polishing pad downforce on the substrate of less than or equal to 1.75 psi, using an aqueous slurry comprising abrasive particles comprising an individual particle size of less than or equal to 100 nanometers and at a particle concentration of less than or equal to 20% by weight, and at least one of an acid or a surfactant effective to achieve a removal rate of the organic material of at least 500 Angstroms per minute. Other aspects and implementations are contemplated.
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patent: 6936540 (2005-08-01), Andreas
patent: 2003/0162399 (2003-08-01), Singh
patent: 2005/0064712 (2005-03-01), Andreas
patent: 2005/0076581 (2005-04-01), Small et al.
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patent: 2005/0136669 (2005-06-01), Lee et al.
Carswell Andrew
Chandrasekaran Naga
Lu Zhenyu
Ahmadi Mohsen
Lebentritt Michael S.
Micro)n Technology, Inc.
Wells St. John P.S.
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