Semiconductor processing

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156603, 156613, 156DIG88, 148175, C30B 104

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active

043415881

ABSTRACT:
Crystalline semiconductor material is produced in strip or sheet form by a gas process. The corresponding amorphous semiconductor is vapour deposited on to a substrate material which is subsequently removed from the amorphous semiconductor. The semiconductor is then selectively heated to induce crystallization. Devices may be fabricated on the crystalline material in tandem with the deposition and crystallization processes.

REFERENCES:
patent: 3770565 (1973-11-01), Schoolar et al.
patent: 3914856 (1975-10-01), Fang
patent: 3993533 (1976-11-01), Milnes et al.
patent: 4027053 (1977-05-01), Lesk
patent: 4066527 (1978-01-01), Takagi et al.
IBM Technical Disclosure Bulletin, vol. 19, No. 10, 3/77, 3955, 3956 (Gutfeld).
C&EN, Jan. 2, 1978, p. 8.

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