Semiconductor process yield analysis based on evaluation of...

Data processing: measuring – calibrating – or testing – Measurement system in a specific environment – Quality evaluation

Reexamination Certificate

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C702S085000, C438S014000

Reexamination Certificate

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06885955

ABSTRACT:
Semiconductor process yield analysis in which the relationship between a wafer-level parameter and a die-level parameter is evaluated can be performed more quickly and with greater accuracy than has been the case with previous such yield analysis. The yield analysis can be performed by selecting regions of a semiconductor wafer or wafers from which parametric data is to be obtained for use in the analysis, based on one or more characteristics of the wafer(s). The yield analysis can be performed by grouping the parametric data based on both a grouping of the wafer-level parametric data and a grouping of the die-level parametric data. The yield analysis can be performed by grouping the parametric data in greater than 3 groups.

REFERENCES:
patent: 6210983 (2001-04-01), Atchison et al.
patent: 6324481 (2001-11-01), Atchison et al.
patent: 6393602 (2002-05-01), Atchison et al.
patent: 20030229410 (2003-12-01), Smith et al.

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