Semiconductor process evaluation methods including variable...

Details Semiconductor process evaluation methods including variable... Semiconductor process evaluation methods including variable...

2011-07-05

2011-07-05

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

With measuring or testing

C438S010000, C438S017000, C438S795000, C438S798000, C257SE21521, C257SE21525, C257SE21529, C257SE21530, C257SE21531

Reexamination Certificate

active

07972874

ABSTRACT:
Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.

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Campbell, Ann N. et al. “Effects of Focused Ion Beam Irradiation on MOS Transistors”. Conference Proceedings: IEEE International Reliability Physics Symposium. Denver, CO. Apr. 8-10, 1997, pp. 72-81.

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