Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-02
2005-08-02
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S584000, C427S123000
Reexamination Certificate
active
06924232
ABSTRACT:
An electroless plating process for forming a barrier film such as a cobalt tungsten boron film on copper interconnects lines of semiconductor wafers uses a plating bath of morpholine borane which provides higher thermal stability and range, allowing for greater compatibility with low k dielectric materials. Mixed chelating agents with different stability constants with a metal source are used to complex base metal such as copper which dissolves into solution, if any. A fluorosurfactant is used as a wetting agent and stabilizer.
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Garcia Sam S.
Mathew Varughese
Prindle Christopher M.
Everhart Caridad
Freescale Semiconductor Inc.
King Robert L.
Noonan Michael P.
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