Semiconductor probe having wedge shape resistive tip and...

Active solid-state devices (e.g. – transistors – solid-state diode – Point contact device

Reexamination Certificate

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Reexamination Certificate

active

07994499

ABSTRACT:
A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposite polarity to the first impurity, and has first and second semiconductor electrode regions doped with a high concentration of the second impurity on both side slopes of the resistive tip. The probe also includes a cantilever having the resistive tip on an edge portion thereof, and an end portion of the resistive tip has a wedge shape.

REFERENCES:
patent: 7081624 (2006-07-01), Liu et al.
patent: 7411210 (2008-08-01), Jung et al.
patent: 2005/0052984 (2005-03-01), Hong et al.
patent: 2002-168761 (2002-06-01), None
patent: 2006-066064 (2006-03-01), None
patent: 2006-078485 (2006-03-01), None
patent: 2006-514741 (2006-05-01), None
patent: 2006-194879 (2006-07-01), None
patent: 1020060019365 (2006-03-01), None
patent: 03/096409 (2003-11-01), None

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