Semiconductor pressure sensor means and method

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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296211, 73708, 73721, 156651, 156657, 1566591, 156662, 338 4, 428156, H01L 21306, B44C 122, C03C 1500, C03C 2506

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048895903

ABSTRACT:
A piezo-resistive pressure sensor element is formed in the front face of a silicon wafer. A thin diaphragm is formed under the sensing element by anisotropically etching a cavity from the rear face of the wafer. The rear face (cavity-side) rupture pressure of the silicon diaphragm is at least doubled by subjecting the anisotropically etched cavity to a mild isotropic etch. This substantially improves the cavity-side over-pressure rating of the finished pressure sensor without any significant change in the device sensitivity or allows higher sensitivity to be obtained for the same over-pressure rating or intermediate combinations thereof.

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