Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1993-01-05
1994-03-22
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257418, 257419, 73517R, 73721, 73727, 437901, A01L 2966
Patent
active
052967301
ABSTRACT:
A semiconductor pressure sensor according to the present invention comprises a semiconductor substrate having a first surface, a second surface opposite to the first surface and a recess formed in the first surface, the recess defining an interior surface including a bottom surface; and a diffusion region extending from the adjacency of the bottom surface to the second surface. A pressure-sensitive resistance of the semiconductor pressure sensor is formed in the vicinity of the bottom surface of a diaphragm. Therefore, the pressure-sensitive resistance can be formed so as to be brought into alignment with the position of the diaphragm after the formation of the diaphragm. Accordingly, a semiconductor pressure sensor, which does not cause a displacement in position between the diaphragm and the pressure-sensitive resistance and is excellent in accuracy, can be easily fabricated. Further, since the pressure-sensitive resistance can be formed according to the shape of the diaphragm, the diaphragm can be reduced in size and fabricated in the form of a thin film.
REFERENCES:
patent: 4459855 (1984-07-01), Yamagami
patent: 4673354 (1987-06-01), Kurtz
patent: 4773972 (1988-09-01), Mikkor
patent: 4885621 (1989-12-01), Yoder et al.
Matsumi Koji
Takano Osamu
Mintel William
OKI Electric Industry Co., Ltd.
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