Semiconductor pressure sensor device protected with...

Details Semiconductor pressure sensor device protected with... Semiconductor pressure sensor device protected with...

2005-01-18

2005-01-18

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

With specified encapsulant

C257S795000, C257S787000, C257S684000, C257S687000, C257S729000

Reexamination Certificate

active

06844632

ABSTRACT:
In a semiconductor pressure sensor device comprising a housing (1) having a cavity (3), a semiconductor sensor chip (2) mounted within the cavity, leads (4) for conveying pressure detection signals, and bonding wires (6) electrically connecting the sensor chip and the leads, a sensitive portion (2a) of sensor chip (2), leads (4) and bonding wires (6) are covered with an electrically insulating fluorochemical gel material which has a penetration of 30-60 according to JIS K2220, a Tg of up to −45° C., and a degree of saturation swelling in gasoline at 23° C. of up to 7% by weight. The sensor device is improved in operation reliability and durability life.

REFERENCES:
patent: 6111221 (2000-08-01), Miyakoshi et al.
patent: 6472581 (2002-10-01), Muramatsu et al.
patent: 2525433 (1996-05-01), None
patent: 2001-99737 (2001-04-01), None
patent: 2001-153746 (2001-06-01), None
patent: 2001-304999 (2001-10-01), None
patent: 2001-311673 (2001-11-01), None

Affiliated with

Also associated with

Rating

Semiconductor pressure sensor device protected with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor pressure sensor device protected with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor pressure sensor device protected with... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3430867