Semiconductor pressure sensor and method of fabricating the same

Details Semiconductor pressure sensor and method of fabricating the same Semiconductor pressure sensor and method of fabricating the same

1993-04-26

1994-08-09

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257 49, 257 66, 257537, 257635, H01L 2984, H01L 2906

Patent

active

053369181

ABSTRACT:
Disclosed herein is a semiconductor pressure sensor which can improve a withstand voltage across piezoresistance and interconnection layers and a semiconductor substrate. In this semiconductor pressure sensor, a plurality of dot seeds, which are regions for serving as seed crystals for growing monocrystals, are arranged to enclose the piezoresistance, and the interconnection layer is formed to pass through a clearance between adjacent ones of the dot seeds.

REFERENCES:
patent: 4396930 (1983-08-01), Mizutani
patent: 4822752 (1989-04-01), Sugahara et al.

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