Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1994-01-06
1995-07-11
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257467, 257536, 257627, 73721, H01L 2984, H01L 2996
Patent
active
054323720
ABSTRACT:
A semiconductor pressure sensor includes a semiconductor substrate, a pressure detection gage, and a temperature detection gage. The semiconductor substrate has a thin portion formed in its central portion and a thick portion formed on an outer periphery of the thin portion. The pressure detection gage is formed on one surface of the thin portion of the semiconductor substrate and serves as a piezoelectric resistive region. The temperature detection gage is constituted by a piezoelectric resistive region formed by connecting a plurality of pairs of orthogonal minute line segments in a zigzag form. The two minute line segments of each pair are formed on a surface of the thick portion of the semiconductor substrate in crystallographic directions in which piezoelectric resistance coefficients are minimized.
REFERENCES:
patent: 4317126 (1982-02-01), Gragg, Jr.
patent: 4672411 (1987-06-01), Shimuzu et al.
patent: 5170237 (1992-12-01), Tsuda et al.
Crane Sara W.
Yamatake-Honeywell Co. Ltd.
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