Semiconductor pressure sensor

Details Semiconductor pressure sensor Semiconductor pressure sensor

1990-11-02

1992-12-08

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

73721, 257536, 257629, H01L 2984, H01L 2996

Patent

active

051702371

ABSTRACT:
A semiconductor pressure sensor comprising a diaphragm area formed on a semiconductor chip, a plurality of gauge resistances arranged on one face of the diaphragm area to form a bridge circuit, and an oxide film formed on the top of the diaphragm area, wherein at least one additional pattern is formed in a portion of said diaphragm area other than said gauge resistances. The thickness of the oxide film on said additional pattern is smaller than the thickness of the oxide film on portions other than said gauge resistances and said additional pattern.

REFERENCES:
patent: 4672411 (1987-06-01), Shimizu et al.
Kanda, Y. et al "Improved Si Piezo-Transistors . . . " IEEE Trans. Elec. Devices Jul. 1978, 813-818.

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