Semiconductor power module

Details Semiconductor power module Semiconductor power module

1993-06-24

1995-11-28

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

257692, 257693, 257723, H01L 2316

Patent

active

054710898

ABSTRACT:
In a semiconductor power module, a surge voltage on a power source line of a semiconductor element for electric power control is restrained. A power source terminal PS(NP) is comprised of power source terminals PS(P) and PS(N) which are arranged adjacent each other through an insulative sheet INS1 made of insulative synthetic resin or the like. The power source terminals PS(P) and PS(N) are each formed by a conductive plate and respectively transmit a positive and negative power source potentials. The thickness of the insulative sheet INS1 is 0.5 mm to 1.5 mm, for instance. A reduction is made in a parasitic inductance which is present in the power source line which extends from the power source terminal PS(P) to the power source terminal PS(N) through the semiconductor element for electric power control, thereby suppressing a surge voltage which is developed between the power source terminal PS(P) and the power source terminal PS(N).

REFERENCES:
patent: 4965710 (1990-10-01), Pelly et al.
Patent Abstracts of Japan, vol. 13, No. 486, (E-840) Nov. 6, 1989 & JP-A-01 194 344, Aug. 4, 1989.

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