Semiconductor power integrated circuit

Details Semiconductor power integrated circuit Semiconductor power integrated circuit

2001-05-23

2002-06-11

Tsai, Jey (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S510000, C257S500000

Reexamination Certificate

active

06404011

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to a semiconductor power integrated circuit; and, more particularly, to a semiconductor power integrated circuit and a method for fabricating the same having a trench isolation, in which a field oxide layer, a gate oxide layer and a diode insulating layer are simultaneously formed together with a trench filling, thereby reducing processing steps and obtaining a low on-resistance.
DESCRIPTION OF THE PRIOR ART
Semiconductor power integrated circuits (ICs) for use in a high voltage of 100V to 500V have been used as driver ICs in such as step motors, FED (field emission display) and PDP (plasma display panel). In fabricating the semiconductor power IC having a high breakdown voltage of 30V to 100V, an isolation technology is very important since it directly relates to a packing density and a leakage current.
Referring to
FIG. 1
, a conventional trench filling technology used for isolation in the semiconductor power device will be described below.
A buried oxide layer
11
and a P-epi (epitaxial) layer
12
are sequentially formed on an N-type silicon substrate
10
. A deep P-well region
13
and deep N-well regions
14
A and
14
B are formed on the P-epi layer
12
. Then, an ion implantation is performed to form a P-well region
18
, an N-drift region
19
, N-well regions
20
A and
20
B and P-drift regions
21
A and
21
B. Thereafter, the deep P-well region
13
and the deep N-well regions
14
A and
14
B are selectively etched to form a trench
15
to thereby expose the buried oxide layer
11
.
A TEOS (tetra-ethyl-ortho-silicate)-oxide layer
16
is formed on a whole surface of the semiconductor structure after forming the trench
15
and the polysilicon layer
17
is then formed on the TEOS-oxide layer
16
to thereby fill the trench
15
. Then, an etch back or a chemical mechanical polishing (CMP) is performed to planarize a surface of an entire structure after filling the trench
15
. Thereafter, a local oxidation of silicon (LOCOS) process is performed at a temperature of about 1000° C. for a long time to form a field oxide layer
23
, a trench isolation layer
22
, a gate oxide layer
24
and a diode insulating layer
25
.
Gate electrodes
26
and
27
are formed on the field oxide layer
23
and the gate oxide layer
24
. A n
+
source regions
28
A to
28
C, p
+
source regions
29
A to
29
C, n
+
drain region
30
, and p
+
drain regions
31
A and
31
B are formed on the P-well region
18
, the N-drift region
19
, the N-well regions
20
A and
20
B and the P-drift regions
21
A and
21
B by an ion implantation of impurities.
In semiconductor power IC fabricated by the above-mentioned method, a breakdown voltage and an on-resistance are controlled by the deep N-well regions
14
A and
14
B and the P-drift regions
21
A and
21
B, wherein the deep N-well regions
14
A and
14
B are formed on the P-epi layer
12
having a high resistivity. That is, a breakdown voltage of a vertical direction is determined by a thickness and impurity concentration of the P-epi layer
12
and a depth and impurity concentration of the P-drift regions
21
A and
21
B. A breakdown voltage of a horizontal direction is determined by a distance between the p
+
drain regions
31
A and
31
B and the p
+
source regions
29
B and
29
C. Additionally, in case where the impurity concentration of the P-drift regions
21
A and
21
B are low, the voltage breakdown occurs at a drain edge, and in case where the impurity concentration of the P-drift regions
21
A and
21
B is high, the voltage breakdown occurs at a gate edge.
However, it is difficult to prevent the deep N-well regions
14
A and
14
B and the N-well regions
20
A and
20
B from the impurity redistribution since a thermal treatment process is performed at a high temperature for a long time to form the field oxide layer
23
, the trench isolation layer
22
, the gate oxide layer
24
and the diode insulating layer
25
. Therefore, there may occur a problem that the device characteristic is greatly degraded.
SUMMARY OF THE INVENTION
It is, therefore, an object of the present invention to provide a semiconductor power integrated circuit and a method for fabricating the same, in which processing steps are reduced and a low on-resistance can be obtained.
In accordance with an embodiment of the present invention, there is provided a method for fabricating a semiconductor power integrated circuit, comprising the steps of: a) forming a semiconductor structure having at least one active region, wherein an active region includes a well region for forming a channel and a source, and a drift region for forming a drain region; b) forming a trench for isolation of the active regions, wherein the trench has a predetermined depth from a surface of the semiconductor structure; c) forming a first TEOS-oxide layer inside the trench and above the semiconductor structure, wherein the first TEOS-oxide layer has a predetermined thickness from the surface of the semiconductor device; d) forming a second TEOS-oxide layer on the first TEOS-oxide layer, wherein a thickness of the second TEOS-oxide layer is smaller than that of the first TEOS-oxide layer; and e) performing a selective etching to the first and second TEOS-oxide layers, to thereby simultaneously form a field oxide layer pattern and a gate oxide layer pattern.
In accordance with another embodiment of the present invention, there is provided a semiconductor power integrated circuit, comprising; a) a semiconductor structure having a trench with a predetermined depth from a surface of the semiconductor structure, wherein the semiconductor structure includes an active region having a well region for forming a channel and a source, and a drift region for forming a drain region; b) a trench isolation layer pattern including a first oxide layer and a second oxide layer, wherein the first oxide layer fills inside the trench and has a predetermined thickness from the surface of the semiconductor structure, and wherein the second oxide layer is formed on the first oxide layer and has a predetermined thickness smaller than the second oxide layer; c) a field oxide layer pattern including a third oxide layer and a fourth oxide layer, wherein the third oxide layer is simultaneously formed with the same layer as the first oxide layer of the field oxide layer pattern and has a predetermined thickness from a surface of the semiconductor structure, and wherein the fourth oxide layer is simultaneously formed with the same layer as the second oxide layer of the field oxide layer of the field oxide layer pattern and has a thickness smaller than the third oxide layer; and d) a gate oxide layer pattern including a fifth oxide layer and a sixth oxide layer, wherein the fifth oxide layer is simultaneously formed with the same layer as the first oxide layer of the field oxide layer pattern and has a predetermined thickness from a surface of the semiconductor structure, and wherein the sixth oxide layer is simultaneously formed with the same layer as the second oxide layer of the field oxide layer of the field oxide layer pattern and has a thickness smaller than the third oxide layer.


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Boron Out Diffusion From Is Substrates in Various Ambients by K. Suzuki pp. 1095-1097, 1978.
Tapered Windows in Phosphorous-Doped SiO2 by Ion Implantation by J. North pp. 809-812, 1996.

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