Semiconductor power device with insulated gate and...

Details Semiconductor power device with insulated gate and... Semiconductor power device with insulated gate and...

2007-04-17

2007-04-17

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000

Reexamination Certificate

active

10993917

ABSTRACT:
A semiconductor power device includes an insulated gate and a trench-gate structure. The trench-gate structure is formed on a semiconductor substrate covered by an epitaxial layer. The trench is formed in the semiconductor to form the device gate region. A dielectric coating is provided on the inner and bottom walls of the trench. The gate region includes a conductive spacer layer on the coating layer only on the inner walls of the trench.

REFERENCES:
patent: 4767722 (1988-08-01), Blanchard
patent: 4893160 (1990-01-01), Blanchard
patent: 5168331 (1992-12-01), Yilmaz
patent: 5214305 (1993-05-01), Huang et al.
patent: 5401677 (1995-03-01), Bailey et al.
patent: 6573560 (2003-06-01), Shenoy
patent: 6580123 (2003-06-01), Thapar
patent: 7045858 (2006-05-01), Matsuda et al.
patent: 2001/0006836 (2001-07-01), Nakamura et al.
patent: 2002/0130359 (2002-09-01), Okumura et al.
patent: 2002/0158287 (2002-10-01), Fujishima et al.
patent: 03425764.2 (2004-05-01), None

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